Type Designator: AO4447
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88.8 nC
   trⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SO-8