Type Designator: AO4629
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 6(5.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2 nC
   trⓘ - Rise Time: 2.5(5.5) nS
   Cossⓘ - Output Capacitance: 45(100) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.041) Ohm
   Package: SO-8