Type Designator: AO4932
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12(20) V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 11(8) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 2.4(3.5) nS
   Cossⓘ - Output Capacitance: 128(110) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125(0.019) Ohm
   Package: SO-8