Type Designator: AO4627
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5(3.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2 nC
   trⓘ - Rise Time: 1.5(4.1) nS
   Cossⓘ - Output Capacitance: 35(42) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05(0.1) Ohm
   Package: SO-8