Type Designator: AO4606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 6(6.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.55 nC
   trⓘ - Rise Time: 2.5(6) nS
   Cossⓘ - Output Capacitance: 45(140) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.028) Ohm