Type Designator: AO4710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 12.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 317 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: SO-8