Type Designator: AO4442
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.46 nC
   trⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SO-8