{"title":"P-Channel MOSFET","description":"","products":[{"product_id":"p-channel-mosfet-ao4407a-ao4407-4407a-soic-8-30v-12a","title":"AO4610 NP-Channel MOSFET SOP-8 AO4610","description":"\u003cdiv class=\"z\"\u003e\n\u003cdiv class=\"first\"\u003e\u003cnav role=\"full-horizontal\"\u003e\n\u003cul\u003e\u003c\/ul\u003e\n\u003c\/nav\u003e\u003c\/div\u003e\n\u003c\/div\u003e\n\u003cp\u003e   Type Designator: AO4606 \u003cbr\u003e   Type of Transistor: MOSFET \u003cbr\u003e   Type of Control Channel: NP -Channel\u003cbr\u003e   \u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePdⓘ\u003c\/abbr\u003e - Maximum Power Dissipation: 2 W\u003cbr\u003e   \u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e - Maximum Drain-Source Voltage: 30 V\u003cbr\u003e   \u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e - Maximum Gate-Source Voltage: 20 V\u003cbr\u003e   \u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003eⓘ - Maximum Gate-Threshold Voltage: 2.4 V\u003cbr\u003e   \u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id|ⓘ\u003c\/abbr\u003e - Maximum Drain Current: 6(6.5) A\u003cbr\u003e   \u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTjⓘ\u003c\/abbr\u003e - Maximum Junction Temperature: 150 °C\u003cbr\u003e   \u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQgⓘ\u003c\/abbr\u003e - Total Gate Charge: 2.55 nC\u003cbr\u003e   \u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etrⓘ\u003c\/abbr\u003e - Rise Time: 2.5(6) nS\u003cbr\u003e   \u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e - Output Capacitance: 45(140) pF\u003cbr\u003e   \u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRdsⓘ\u003c\/abbr\u003e - Maximum Drain-Source On-State Resistance: 0.03(0.028) Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e \u003cbr\u003e   Package: \u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=20465#img10\"\u003eSO-8\u003c\/a\u003e\u003c\/p\u003e","brand":"Долфи Сървиз","offers":[{"title":"Default Title","offer_id":50096668508485,"sku":"AO4606 mosfet","price":2.04,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/Screenshot2024-12-23at00-24-47H3c29ddcaec4f4081b37dff6e4546abbcT.jpg_WEBPImage800x800pixels_Scaled_85.png?v=1734906348"},{"product_id":"n-channel-mosfet-sop-8-ao4822a-copy","title":"AO4803 P-Channel MOSFET SOP-8 AO4803 A04803","description":"\u003cp\u003e   Type Designator: AO4803 \u003cbr\u003e   Type of Transistor: MOSFET \u003cbr\u003e   Type of Control Channel: P -Channel\u003cbr\u003e   \u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePdⓘ\u003c\/abbr\u003e - Maximum Power Dissipation: 2 W\u003cbr\u003e   \u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e - Maximum Drain-Source Voltage: 30 V\u003cbr\u003e   \u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e - Maximum Gate-Source Voltage: 20 V\u003cbr\u003e   \u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003eⓘ - Maximum Gate-Threshold Voltage: 2.4 V\u003cbr\u003e   \u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id|ⓘ\u003c\/abbr\u003e - Maximum Drain Current: 5 A\u003cbr\u003e   \u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTjⓘ\u003c\/abbr\u003e - Maximum Junction Temperature: 150 °C\u003cbr\u003e   \u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQgⓘ\u003c\/abbr\u003e - Total Gate Charge: 4.6 nC\u003cbr\u003e   \u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etrⓘ\u003c\/abbr\u003e - Rise Time: 5.5 nS\u003cbr\u003e   \u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e - Output Capacitance: 100 pF\u003cbr\u003e   \u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRdsⓘ\u003c\/abbr\u003e - Maximum Drain-Source On-State Resistance: 0.052 Ohm\u003c\/p\u003e","brand":"Долфи Сървиз","offers":[{"title":"Default Title","offer_id":53840105865541,"sku":"AO4803 mosfet","price":2.04,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/Screenshot2024-12-23at00-24-47H3c29ddcaec4f4081b37dff6e4546abbcT.jpg_WEBPImage800x800pixels_Scaled_85.png?v=1734906348"},{"product_id":"p-channel-mosfet-sop-8-ao4803a","title":"AO4803A P-Channel MOSFET SOP-8 AO4803A","description":"\u003cp\u003e Type Designator: AO4803A \u003cbr\u003e   Type of Transistor: MOSFET \u003cbr\u003e   Type of Control Channel: P -Channel\u003cbr\u003e   \u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePdⓘ\u003c\/abbr\u003e - Maximum Power Dissipation: 2 W\u003cbr\u003e   \u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e - Maximum Drain-Source Voltage: 30 V\u003cbr\u003e   \u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e - Maximum Gate-Source Voltage: 20 V\u003cbr\u003e   \u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003eⓘ - Maximum Gate-Threshold Voltage: 2.5 V\u003cbr\u003e   \u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id|ⓘ\u003c\/abbr\u003e - Maximum Drain Current: 5 A\u003cbr\u003e   \u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTjⓘ\u003c\/abbr\u003e - Maximum Junction Temperature: 150 °C\u003cbr\u003e   \u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQgⓘ\u003c\/abbr\u003e - Total Gate Charge: 4.6 nC\u003cbr\u003e   \u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etrⓘ\u003c\/abbr\u003e - Rise Time: 5.5 nS\u003cbr\u003e   \u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e - Output Capacitance: 100 pF\u003cbr\u003e   \u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRdsⓘ\u003c\/abbr\u003e - Maximum Drain-Source On-State Resistance: 0.046 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e \u003cbr\u003e   Package: \u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=20490#img10\"\u003eSO-8\u003c\/a\u003e\u003c\/p\u003e","brand":"Долфи Сървиз","offers":[{"title":"Default Title","offer_id":53840117825861,"sku":"AO4803A mosfet","price":2.04,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/Screenshot2024-12-23at00-24-47H3c29ddcaec4f4081b37dff6e4546abbcT.jpg_WEBPImage800x800pixels_Scaled_85.png?v=1734906348"},{"product_id":"n-channel-mosfet-sop-8","title":"AO4407 P-Channel MOSFET SOIC-8 AO4407 30V 12A","description":"\u003cp\u003e Type Designator: AO4407 \u003cbr\u003e   Type of Transistor: MOSFET \u003cbr\u003e   Type of Control Channel: P -Channel\u003cbr\u003e   \u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePdⓘ\u003c\/abbr\u003e - Maximum Power Dissipation: 3.1 W\u003cbr\u003e   \u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e - Maximum Drain-Source Voltage: 30 V\u003cbr\u003e   \u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e - Maximum Gate-Source Voltage: 25 V\u003cbr\u003e   \u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003eⓘ - Maximum Gate-Threshold Voltage: 2.8 V\u003cbr\u003e   \u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id|ⓘ\u003c\/abbr\u003e - Maximum Drain Current: 12 A\u003cbr\u003e   \u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTjⓘ\u003c\/abbr\u003e - Maximum Junction Temperature: 150 °C\u003cbr\u003e   \u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQgⓘ\u003c\/abbr\u003e - Total Gate Charge: 30 nC\u003cbr\u003e   \u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etrⓘ\u003c\/abbr\u003e - Rise Time: 9.4 nS\u003cbr\u003e   \u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e - Output Capacitance: 370 pF\u003cbr\u003e   \u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRdsⓘ\u003c\/abbr\u003e - Maximum Drain-Source On-State Resistance: 0.014 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e \u003cbr\u003e   Package: \u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=20412#img10\"\u003eSO-8\u003c\/a\u003e\u003c\/p\u003e","brand":"Долфи Сървиз","offers":[{"title":"Default Title","offer_id":53927397425477,"sku":"AO4407","price":2.04,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/Screenshot2025-01-07at19-29-07A04407A-Google.png?v=1736270977"},{"product_id":"p-channel-mosfet-sop-8-ao4447","title":"AO4447 P-Channel MOSFET SOP-8 AO4447","description":"\u003cp\u003e   Type Designator: AO4447 \u003cbr\u003e   Type of Transistor: MOSFET \u003cbr\u003e   Type of Control Channel: P -Channel\u003cbr\u003e   \u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePdⓘ\u003c\/abbr\u003e - Maximum Power Dissipation: 3.1 W\u003cbr\u003e   \u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e - Maximum Drain-Source Voltage: 30 V\u003cbr\u003e   \u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e - Maximum Gate-Source Voltage: 20 V\u003cbr\u003e   \u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003eⓘ - Maximum Gate-Threshold Voltage: 1.6 V\u003cbr\u003e   \u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id|ⓘ\u003c\/abbr\u003e - Maximum Drain Current: 15 A\u003cbr\u003e   \u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTjⓘ\u003c\/abbr\u003e - Maximum Junction Temperature: 150 °C\u003cbr\u003e   \u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQgⓘ\u003c\/abbr\u003e - Total Gate Charge: 88.8 nC\u003cbr\u003e   \u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etrⓘ\u003c\/abbr\u003e - Rise Time: 11.5 nS\u003cbr\u003e   \u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e - Output Capacitance: 745 pF\u003cbr\u003e   \u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRdsⓘ\u003c\/abbr\u003e - Maximum Drain-Source On-State Resistance: 0.0075 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e \u003cbr\u003e   Package: \u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=20435#img10\"\u003eSO-8\u003c\/a\u003e\u003c\/p\u003e","brand":"Долфи Сървиз","offers":[{"title":"Default Title","offer_id":53927480557893,"sku":"AO4447 mosfet","price":2.04,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/Screenshot2024-12-23at00-24-47H3c29ddcaec4f4081b37dff6e4546abbcT.jpg_WEBPImage800x800pixels_Scaled_85.png?v=1734906348"},{"product_id":"aon6403-30v-85a-p-channel-mosfet-dfn5x6-8l","title":"AON6403 30V 85A P-Channel MOSFET DFN5x6-8L","description":"\u003ctable style=\"width:100%; border-collapse:collapse; font-family:Arial, sans-serif; font-size:14px;\"\u003e\n  \u003ctbody\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eОсновни функции\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМодел\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAON6403\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПроизводител\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAlpha \u0026amp; Omega Semiconductor (AOS)\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТип\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eP-Channel MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКатегория\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eMOSFET Транзистори\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eЕлектрически характеристики\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-30V\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМаксимален ток\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДо -85A\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -10V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e3.1mΩ max\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -4.5V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e4.3mΩ max\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e±20V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eПриложение\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eИзползва се при\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eLoad Switch, Battery Protection, DC\/DC конвертори и Power Management вериги\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПодходящ за\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eЛаптопи, дънни платки, видеокарти и захранващи модули\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eКорпус\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePackage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDFN5x6-8L \/ 8-DFN\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eРазмер\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e5mm × 6mm\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМонтаж\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSMD\u003c\/td\u003e\n\u003c\/tr\u003e\n\n  \u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Alpha \u0026 Omega Semiconductor","offers":[{"title":"Default Title","offer_id":58235403370821,"sku":null,"price":1.25,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/d9c1d597-221d-4163-9f31-3de2544baaf3.png?v=1781084605"},{"product_id":"aon6405-30v-30a-p-channel-mosfet-dfn5x6-8l","title":"AON6405 30V 30A P-Channel MOSFET DFN5x6-8L","description":"\u003ctable style=\"width:100%; border-collapse:collapse; font-family:Arial, sans-serif; font-size:14px;\"\u003e\n  \u003ctbody\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eОсновни функции\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМодел\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAON6405\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПроизводител\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAlpha \u0026amp; Omega Semiconductor (AOS)\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТип\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eP-Channel MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКатегория\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eMOSFET Транзистори\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eЕлектрически характеристики\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-30V\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМаксимален ток\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДо -30A\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -10V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e\u0026lt; 7mΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -4.5V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e\u0026lt; 8mΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e±20V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eПриложение\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eИзползва се при\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eLoad Switch, Battery Protection, DC\/DC конвертори и Power Management вериги\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПодходящ за\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eЛаптопи, дънни платки, видеокарти и захранващи модули\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТипични повреди\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКъсо към маса, липса на захранване, повреда във входна или батерийна секция\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\n      \u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eКорпус\u003c\/th\u003e\n    \u003c\/tr\u003e\n\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePackage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDFN5x6-8L \/ 8-DFN\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eРазмер\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e5mm × 6mm\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМонтаж\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSMD\u003c\/td\u003e\n\u003c\/tr\u003e\n\n  \u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Alpha \u0026 Omega Semiconductor","offers":[{"title":"Default Title","offer_id":58235771027781,"sku":null,"price":1.46,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/ede9178b-1be0-4b42-8624-c515db9463db.png?v=1781085301"},{"product_id":"aon6407-30v-85a-p-channel-mosfet-dfn5x6-8l","title":"AON6407 30V 85A P-Channel MOSFET DFN5x6-8L","description":"\u003ctable style=\"width:100%; border-collapse:collapse; font-family:Arial, sans-serif; font-size:14px;\"\u003e\n\u003ctbody\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nОсновни функции\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМодел\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAON6407\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПроизводител\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAlpha \u0026amp; Omega Semiconductor (AOS)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТип\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eP-Channel MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКатегория\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eMOSFET Транзистори\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nЕлектрически характеристики\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain-Source Voltage (VDS)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-30V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМаксимален ток (ID)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДо -85A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -10V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e4.5mΩ Max\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -6V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e6mΩ Max\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e±25V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate Charge\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e75nC\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nПриложение\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eИзползва се при\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eBattery Protection, Load Switch, DC\/DC конвертори и Power Management вериги\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПодходящ за\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eЛаптопи, дънни платки, видеокарти, индустриални захранвания\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТипични повреди\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКъсо към маса, липса на захранване, проблеми при зареждане на батерията\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nКорпус\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePackage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDFN5x6-8L\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eРазмер\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e5mm × 6mm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМонтаж\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSMD\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Alpha \u0026 Omega Semiconductor","offers":[{"title":"Default Title","offer_id":58236250194245,"sku":null,"price":1.68,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/ede9178b-1be0-4b42-8624-c515db9463db_4c0c5d56-28dc-4984-89f9-23d5068eecc0.png?v=1781086171"},{"product_id":"aon6411-30v-p-channel-mosfet-dfn5x6-8l","title":"AON6411 30V P-Channel MOSFET DFN5x6-8L","description":"\u003ctable style=\"width:100%; border-collapse:collapse; font-family:Arial, sans-serif; font-size:14px;\"\u003e\n  \u003ctbody\u003e\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eОсновни функции\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМодел\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAON6411\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПроизводител\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAlpha \u0026amp; Omega Semiconductor (AOS)\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТип\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eP-Channel MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКатегория\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eMOSFET Транзистори\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eЕлектрически характеристики\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-30V\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМаксимален ток\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eСпоред datasheet\/ревизията\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eНиско съпротивление за Power Management вериги\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eОбикновено ±20V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eПриложение\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eИзползва се при\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eLoad Switch, Battery Protection, входни захранващи вериги и Power Management секции\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПодходящ за\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eЛаптопи, дънни платки, видеокарти и захранващи модули\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТипични повреди\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКъсо към маса, липса на входно напрежение, проблем със зарядна или батерийна линия\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eКорпус\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePackage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDFN5x6-8L\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eРазмер\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e5mm × 6mm\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМонтаж\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSMD\u003c\/td\u003e\n\u003c\/tr\u003e\n  \u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Alpha \u0026 Omega Semiconductor","offers":[{"title":"Default Title","offer_id":58236882321733,"sku":null,"price":1.77,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/53a18b38-c622-43c4-a127-1cb543897e0c.png?v=1781088962"},{"product_id":"aon6413-30v-32a-p-channel-mosfet-dfn5x6-8l","title":"AON6413 30V 32A P-Channel MOSFET DFN5x6-8L","description":"\u003ctable style=\"width:100%; border-collapse:collapse; font-family:Arial, sans-serif; font-size:14px;\"\u003e\n  \u003ctbody\u003e\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eОсновни функции\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМодел\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAON6413\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПроизводител\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAlpha \u0026amp; Omega Semiconductor (AOS)\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТип\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eP-Channel MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eКатегория\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eMOSFET Транзистори\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eЕлектрически характеристики\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-30V\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМаксимален ток\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДо -32A\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -10V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e\u0026lt; 8.5mΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(on) @ -4.5V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e\u0026lt; 17mΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e±25V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eПриложение\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eИзползва се при\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSystem Load Switch, Battery Switch и Power Management вериги\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПодходящ за\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eЛаптопи, дънни платки, видеокарти и захранващи модули\u003c\/td\u003e\n\u003c\/tr\u003e\n\n    \u003ctr\u003e\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003eКорпус\u003c\/th\u003e\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePackage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDFN5x6-8L\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eРазмер\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e5mm × 6mm\u003c\/td\u003e\n\u003c\/tr\u003e\n    \u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМонтаж\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSMD\u003c\/td\u003e\n\u003c\/tr\u003e\n  \u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Alpha \u0026 Omega Semiconductor","offers":[{"title":"Default Title","offer_id":58236934586693,"sku":null,"price":1.46,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/415501ad-f2fd-4e6f-8ba6-93e72b3c6ccb_2975e2f6-96b5-44d1-835d-a7564d2b6f6b.png?v=1781089580"},{"product_id":"aons21357-p-channel-mosfet-30v-36a-dfn5x6-qfn-8-power-ic-chip","title":"AONS21357 P-Channel MOSFET 30V 36A DFN5x6 QFN-8 Power IC Chip","description":"\u003ctable style=\"width:100%; border-collapse:collapse; font-family:Arial, sans-serif; font-size:14px;\"\u003e\n\u003ctbody\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nОсновни характеристики\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТип\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eP-Channel Enhancement MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eПроизводител\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAlpha \u0026amp; Omega Semiconductor (AOS)\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМодел\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAONS21357\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eТехнология\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eAdvanced Trench MOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nЕлектрически параметри\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain-Source Voltage (VDS)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-30V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Source Voltage (VGS)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e±25V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDrain Current (ID)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-36A\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-144A\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nСъпротивление\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(ON) @ -10V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e7.8mΩ Max\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRDS(ON) @ -4.5V\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e12.3mΩ Max\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e-1.3V до -2.3V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nGate характеристики\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eTotal Gate Charge (Qg)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e50nC @ -10V\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eInput Capacitance (CISS)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e2830pF\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eGate-Drain Charge (Qgd)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003e12nC\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nХарактеристики\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eНиско RDS(ON)\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДа\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eВисока токова натоварваемост\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДо 36A\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eRoHS\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДа\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eHalogen Free\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eДа\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nПриложения\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eИзползва се в\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eNotebook AC-IN вериги, Battery Protection, Charging Circuits, Power Path, лаптопи, дънни платки и захранващи модули\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003cth colspan=\"2\" style=\"text-align:left; background:#f2f2f2; border:1px solid #ddd; padding:10px;\"\u003e\nКорпус\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003ePackage\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eDFN5x6 \/ QFN-8\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003ctr\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eМонтаж\u003c\/td\u003e\n\u003ctd style=\"border:1px solid #ddd; padding:8px;\"\u003eSMD\u003c\/td\u003e\n\u003c\/tr\u003e\n\n\u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Alpha \u0026 Omega Semiconductor","offers":[{"title":"Default Title","offer_id":58237492691269,"sku":null,"price":2.1,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/1947\/4761\/files\/nowy-uklad-mosfet-p-channel-aons21357-aon21357-ao21357-aon-21357-5x6mm.jpg?v=1781092568"}],"url":"https:\/\/dservice.bg\/collections\/p-channel-mosfet.oembed","provider":"Долфи Сървиз ","version":"1.0","type":"link"}